2
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 300
μAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 1200 mAdc)
VGS(Q)
?
3.7
?
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3 Adc)
VDS(on)
?
0.26
0.3
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 3 Adc)
gfs
?
7.5
?
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.6
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 28 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
12
13.5
?
dB
Drain Efficiency
ηD
24
26
?
%
Intermodulation Distortion
IM3
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
?
-39
-37
dBc
Input Return Loss
IRL
?
-12
-9
dB
1. Part internally matched both on input and output.